Fringe structures and tunable bandgap width of 2D boron nitride nanosheets

• Peter Feng,
• Muhammad Sajjad,
• Eric Yiming Li,
• Hongxin Zhang,
• Jin Chu,
• Ali Aldalbahi and
• Gerardo Morell

Beilstein J. Nanotechnol. 2014, 5, 1186–1192, doi:10.3762/bjnano.5.130

• , simple treatments with hydrogen gas do not affect the bandgap width of the BNNSs. Keywords: boron nitride sheets; fringe patterns; functionalization; tunable bandgap width; Introduction The recent successful investigation of graphene has stimulated interest in atomically thin boron nitride sheets [1][2

• ]. In the present paper, the focus of studies is on variation of the fringe structures and the hydrogen (H) atoms induced band gap width. Chemically shifted components were observed following H treatment, and clear evidence of tunable bandgap width was found. Experimental A pulsed CO2 laser deposition

• always imaged extremely fast with reduced illumination, or the TEM should be operated at low energy of electron beam. Functionalization for tunable bandgap width of BNNSs The wide-band gap of BNNS is a serious obstacle for their application in electronics, despite their high thermal and chemical